- 封装/外壳：
-
- 电流 - 最大值：
-
- 二极管类型：
-
- 功率耗散（最大值）：
-
- 已选条件：
13 条记录
| 图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE SCHOTTK... |
1 | 1,762 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE STANDAR... |
1 | 408 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE STANDAR... |
1 | 2,000 | 加入询价 | |
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE STANDAR... |
1 | 2,000 | 加入询价 | |
|
|
Microchip Technology | SI NOISE HERMETI... |
1 | 2,000 | 加入询价 | |
|
|
Microchip Technology | SI NOISE HERMETI... |
1 | 2,000 | 加入询价 | |
|
|
Microchip Technology | SI NOISE NON HERM... |
1 | 2,000 | 加入询价 | |
|
|
Microchip Technology | SI NOISE NON HERM... |
1 | 2,000 | 加入询价 | |
|
|
Microchip Technology | SI NOISE HERMETI... |
1 | 2,000 | 加入询价 | |
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
1 | 2,000 | 加入询价 | |
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
1 | 2,000 | 加入询价 | |
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
1 | 2,000 | 加入询价 | |
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
1 | 2,000 | 加入询价 |
