- 封装/外壳:
-
- 电压 - 集射极击穿(最大值):
-
- IGBT 类型:
-
- 不同 Vge、Ic 时 Vce(on)(最大值):
-
- 电流 - 集电极截止(最大值):
-
- 不同 Vce 时输入电容 (Cies):
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Vishay General Semiconductor – Diodes Division | ECONO - 4 PACK IGB... |
1 | 108 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | ECONO - 4 PACK IGB... |
1 | 108 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | ECONO - 4 PACK IGB... |
1 | 108 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | POWER MODULE |
1 | 10 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | POWER MODULE |
1 | 10 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | POWER MODULE |
1 | 10 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | POWER MODULE |
1 | 10 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | POWER MODULE |
1 | 10 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | POWER MODULE |
1 | 10 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | POWER MODULE |
1 | 10 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | IGBT MOD OUTPUT &... |
1 | 2,000 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | IGBT MODULE 1200V 5... |
1 | 2,000 | 加入询价 | ||
Vishay General Semiconductor – Diodes Division | MOD IGBT 20A 500V MT... |
1 | 2,000 | 加入询价 |