- 品牌:
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- 安装类型:
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- 工作温度:
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- 封装/外壳:
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- 供应商器件封装:
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- 配置:
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- 漏源电压(Vdss):
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- 25°C 时电流 - 连续漏极 (Id):
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- 不同 Id、Vgs 时导通电阻(最大值):
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- 不同 Id 时 Vgs(th)(最大值):
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- 不同 Vds 时输入电容 (Ciss)(最大值):
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- FET 功能:
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129 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2P-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N/P-CH 20V 0... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET 2P-CH 20V 0.5... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET N/P-CH 10.6V... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 |