- 品牌:
-
- ON Semiconductor (7)
- 供应商器件封装:
-
- 功率 - 最大值:
-
- 25°C 时电流 - 连续漏极 (Id):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
- FET 功能:
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
ON Semiconductor | MOSFET 2N-CH 30V 0.2... |
1 | 270,742 | 加入询价 | ||
ON Semiconductor | MOSFET 2N-CH 30V 0.2... |
1 | 528,920 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 30V 0.1... |
1 | 42,262 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 30V 0.1... |
1 | 225,292 | 加入询价 | ||
ROHM Semiconductor | MOSFET 2N-CH 30V .1A... |
1 | 255,818 | 加入询价 | ||
ROHM Semiconductor | MOSFET 2N-CH 30V .1A... |
1 | 46,879 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 30V 0.1... |
1 | 4,000 | 加入询价 | ||
Diodes Incorporated | MOSFET 2N-CH 30V 0.2... |
1 | 2,796 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | SMALL SIGNAL MOS... |
1 | 20 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 25V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 25V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET 2N-CH 30V 0.2... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 25V~... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | X34 PB-F SOT-363 S-MO... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 25V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 25V~... |
1 | 2,000 | 加入询价 | ||
NXP Semiconductors | MOSFET 2N-CH 30V 0.1... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET 2N-CH 30V 0.2... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET 2N-CH 30V 0.2... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET 2N-CH 30V 0.2... |
1 | 2,000 | 加入询价 |