- 封装/外壳:
-
- 供应商器件封装:
-
- 25°C 时电流 - 连续漏极 (Id):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 500 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 245 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 565 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 290 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 50 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 51 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 12 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 22 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 |