- 品牌:
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- ON Semiconductor (1)
- 封装/外壳:
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- 配置:
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- 功率 - 最大值:
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- 漏源电压(Vdss):
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- 25°C 时电流 - 连续漏极 (Id):
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- 不同 Id、Vgs 时导通电阻(最大值):
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- 不同 Id 时 Vgs(th)(最大值):
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- 不同 Vgs 时栅极电荷 (Qg)(最大值):
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36 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Sanken Electric Co., Ltd. | MOSFET 3N/3P-CH 60V... |
1 | 1,577 | 加入询价 | ||
Sanken Electric Co., Ltd. | MOSFET 5P-CH 60V 5A... |
1 | 275 | 加入询价 | ||
Sanken Electric Co., Ltd. | MOSFET 5N-CH 60V 10A... |
1 | 125 | 加入询价 | ||
Sanken Electric Co., Ltd. | MOSFET 3N/3P-CH 60V... |
1 | 627 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 44 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 22 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Sanken Electric Co., Ltd. | MOSFET 6N-CH 60V 5A... |
1 | 2,000 | 加入询价 | ||
Alpha and Omega Semiconductor, Inc. | MOSFET N/P-CH 30V 8... |
1 | 2,000 | 加入询价 |