- 安装类型：
-
- 封装/外壳：
-
- 配置：
-
- 25°C 时电流 - 连续漏极 (Id)：
-
- 不同 Id、Vgs 时导通电阻（最大值）：
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- 不同 Id 时 Vgs(th)（最大值）：
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- 不同 Vds 时输入电容 (Ciss)（最大值）：
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- FET 功能：
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98 条记录
| 图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
|---|---|---|---|---|---|---|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2P-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2P-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET N/P-CH 10.6V... |
1 | 2,000 | 加入询价 |
