- 漏源电压(Vdss):
-
- 25°C 时电流 - 连续漏极 (Id):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Advanced Linear Devices, Inc. | MOSFET 4 P-CH 8V 16D... |
1 | 100 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 16 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 22 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4 P-CH 8V 16D... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4 P-CH 8V 16D... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4 P-CH 8V 16D... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4 P-CH 8V 16D... |
1 | 2,000 | 加入询价 |