- 安装类型：
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- 封装/外壳：
-
- 功率 - 最大值：
-
- 漏源电压（Vdss）：
-
- 25°C 时电流 - 连续漏极 (Id)：
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- 不同 Id、Vgs 时导通电阻（最大值）：
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- 不同 Id 时 Vgs(th)（最大值）：
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| 图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
|---|---|---|---|---|---|---|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 500 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 245 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 565 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 290 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 50 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 51 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 46 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 14 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 16 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 12 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 22 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 1... |
1 | 2,000 | 加入询价 | |
|
|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 |
