- 品牌:
-
- ON Semiconductor (1)
- 安装类型:
-
- 封装/外壳:
-
- 漏源电压(Vdss):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
- FET 功能:
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 36 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 50 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2P-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 0... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2P-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 8... |
1 | 2,000 | 加入询价 | ||
Advanced Linear Devices, Inc. | MOSFET 2N-CH 10.6V 0... |
1 | 2,000 | 加入询价 |