- 品牌:
-
- UnitedSiC (1)
- 安装类型:
-
- 25°C 时电流 - 连续漏极 (Id):
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
UnitedSiC | MOSFET N-CH 650V 25A... |
1 | 15,892 | 加入询价 | ||
Infineon Technologies | MOSFET N-CH 650V 8H... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | HIGH POWER_NEW |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | HIGH POWER_NEW |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | MOSFET N-CH 650V 8H... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | HIGH POWER_NEW |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | HIGH POWER_NEW |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | MOSFET N-CH 650V 8H... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 2,000 | 加入询价 | ||
Vishay / Siliconix | MOSFET N-CH 650V 22A... |
1 | 2,000 | 加入询价 | ||
STMicroelectronics | MOSFET N-CH 650V 48A... |
1 | 2,000 | 加入询价 |