- 25°C 时电流 - 连续漏极 (Id):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 8A... |
1 | 72 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 500V 12A... |
1 | 50 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 900V 7A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 800V 6A... |
1 | 15 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 450V 13A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 525V 12A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 550V 11A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 10A... |
1 | 2,000 | 加入询价 |