- 品牌:
-
- Nexperia (1)
- PANJIT (10)
- Transphorm (4)
- 封装/外壳:
-
- 供应商器件封装:
-
- 25°C 时电流 - 连续漏极 (Id):
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
- 功率耗散(最大值):
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 6A ... |
1 | 124,394 | 加入询价 | ||
Taiwan Semiconductor | MOSFET N-CH 100V 6.5... |
1 | 13,161 | 加入询价 | ||
PANJIT | SOT-23, MOSFET |
1 | 71,889 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 6A ... |
1 | 29,064 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SS MOS... |
1 | 3,788 | 加入询价 | ||
Infineon Technologies | MOSFET N-CH 100V 1.8... |
1 | 5,018 | 加入询价 | ||
Transphorm | GANFET N-CH 650V 25A... |
1 | 13,017 | 加入询价 | ||
Transphorm | GANFET N-CH 650V 25A... |
1 | 126 | 加入询价 | ||
PANJIT | 60V N-CHANNEL ENHA... |
1 | 6,000 | 加入询价 | ||
Infineon Technologies | TRENCH >=100V PG-TD... |
1 | 10,000 | 加入询价 | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 5,000 | 加入询价 | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 36,292 | 加入询价 | ||
Transphorm | 650 V 25 A GAN FET |
1 | 399 | 加入询价 | ||
PANJIT | 60V N-CHANNEL ENHA... |
1 | 4,999 | 加入询价 | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 17 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 6A ... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | AECQ MOSFET NCH 6... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | AECQ MOSFET NCH 6... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | SMALL SIGNAL MOS... |
1 | 2,000 | 加入询价 | ||
PANJIT | 60V N-CHANNEL ENHA... |
1 | 2,000 | 加入询价 |