- 封装/外壳:
-
- 供应商器件封装:
-
- 25°C 时电流 - 连续漏极 (Id):
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
11 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 17A... |
1 | 17,270 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 17A... |
1 | 2,466 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 40A... |
1 | 409 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 20A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 40A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 800V 11.... |
1 | 8 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 800V 11.... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 450V 10A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 450V 10A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 27A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 20A... |
1 | 2,000 | 加入询价 |