- 品牌:
-
- Diodes Incorporated (31)
- ON Semiconductor (2)
- Panasonic (1)
- 封装/外壳:
-
- 供应商器件封装:
-
- 漏源电压(Vdss):
-
- 25°C 时电流 - 连续漏极 (Id):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
53 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Infineon Technologies | MOSFET N-CH 900V 15A... |
1 | 500 | 加入询价 | ||
Diodes Incorporated | MOSFET P-CH 60V 160M... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET P-CH 100V 230... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET P-CH 45V 230M... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET P-CH 60V 280M... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET P-CH 60V 280M... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET P-CH 100V 140... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | MOSFET N-CH 900V 15A... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | MOSFET N-CH 900V 15A... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET P-CH 100V 230... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 250V 13A... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | MOSFET N-CH 900V 15A... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET P-CH 200V 120... |
1 | 2,000 | 加入询价 | ||
Panasonic | MOSFET N-CH 80V 500M... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 60V 2A ... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 90V 2A ... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET P-CH 45V 230M... |
1 | 2,000 | 加入询价 |