- 品牌:
-
- ON Semiconductor (6)
- 安装类型:
-
- 封装/外壳:
-
- 供应商器件封装:
-
- 漏源电压(Vdss):
-
- 25°C 时电流 - 连续漏极 (Id):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Vishay / Siliconix | AUTOMOTIVE N-CHA... |
1 | 3,225 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 600V 3.9... |
1 | 10,905 | 加入询价 | ||
ROHM Semiconductor | HIGH-SPEED SWITC... |
1 | 2,500 | 加入询价 | ||
ROHM Semiconductor | 650V 9A TO-220FM, HIG... |
1 | 4,000 | 加入询价 | ||
ROHM Semiconductor | MOSFET N-CH 600V 9A... |
1 | 484 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 600V 3.9... |
1 | 274 | 加入询价 | ||
ROHM Semiconductor | 600V 9A TO-220FM, HIG... |
1 | 1,000 | 加入询价 | ||
ROHM Semiconductor | MOSFET N-CH 650V 9A... |
1 | 94 | 加入询价 | ||
ROHM Semiconductor | MOSFET N-CH 600V 9A... |
1 | 20 | 加入询价 | ||
Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 900V 2.4... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 525V 5A... |
1 | 2,000 | 加入询价 | ||
STMicroelectronics | MOSFET N-CH 200V 7A... |
1 | 17,252 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 525V 5A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 500V 6A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 550V 5A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 450V 6.5... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 3A... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 600V 3.9... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 600V 3.9... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET P-CH 200V 3.1... |
1 | 2,000 | 加入询价 |