工作温度:
供应商器件封装:
FET 类型:
漏源电压(Vdss):
不同 Id 时 Vgs(th)(最大值):
Vgs(最大值):
功率耗散(最大值):
图片 型号 品牌 描述 起订量 库存 操作
TPC8014(TE12L,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 11A...
1 2,000 加入询价
TPC8018-H(TE12LQM) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 18A...
1 2,000 加入询价
TPC8021-H(TE12LQ,M Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 11A...
1 2,000 加入询价
TPC8022-H(TE12LQ,M Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 40V 7.5A...
1 2,000 加入询价
TPC8A02-H(TE12L,Q) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 16A...
1 2,000 加入询价
TPC8026(TE12L,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 13A...
1 2,000 加入询价
TPC8036-H(TE12L,QM Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 18A...
1 2,000 加入询价
TPC8042(TE12L,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 18A...
1 2,000 加入询价
TPC8048-H(TE12L,Q) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 60V 16A...
1 2,000 加入询价
TPC8035-H(TE12L,QM Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 18A...
1 2,000 加入询价
TPC8062-H,LQ(CM Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 18A...
1 2,000 加入询价
TPC8126,LQ(CM Toshiba Electronic Devices and Storage Corporation
MOSFET P-CH 30V 11A...
1 2,000 加入询价
TPC8A05-H(TE12L,QM Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 10A...
1 2,000 加入询价
TPC8A06-H(TE12LQM) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 12A...
1 2,000 加入询价
UPA2737GR-E1-AT Intersil(瑞萨电子公司)
MOSFET P-CH 30V 11A...
1 2,000 加入询价
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