- 品牌:
-
- Diodes Incorporated (29)
- Infineon Technologies (157)
- Intersil(瑞萨电子公司) (8)
- Nexperia (37)
- ON Semiconductor (117)
- STMicroelectronics (19)
- NXP Semiconductors (24)
- EPC (10)
- EPC Space (2)
- Goford Semiconductor (16)
- Littelfuse (65)
- Microsemi (1)
- PANJIT (3)
- ROHM Semiconductor (14)
- SparkFun (3)
- Vishay / Siliconix (18)
- Wolfspeed (2)
- YANGJIE (4)
- 安装类型:
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- 工作温度:
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- 封装/外壳:
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- 供应商器件封装:
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- FET 类型:
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- 漏源电压(Vdss):
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- 驱动电压(最大 Rds On,最小 Rds On):
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- 不同 Id、Vgs 时导通电阻(最大值):
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- 不同 Id 时 Vgs(th)(最大值):
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- 不同 Vgs 时栅极电荷 (Qg)(最大值):
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- Vgs(最大值):
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- 不同 Vds 时输入电容 (Ciss)(最大值):
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630 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Infineon Technologies | GAN HV |
1 | 2,000 | 加入询价 | ||
Littelfuse | MOSFET P-CH 600V 68A... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SIC DISCRETE |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SIC DISCRETE |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SIC DISCRETE |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SIC DISCRETE |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | SIC DISCRETE |
1 | 2,000 | 加入询价 | ||
Goford Semiconductor | P-20V,-8.2A,RD(MAX)<8.... |
1 | 3,000 | 加入询价 | ||
Goford Semiconductor | P-60V,-4A,RD(MAX)<110M... |
1 | 3,000 | 加入询价 | ||
YANGJIE | P-CH MOSFET 30V 10A... |
1 | 2,000 | 加入询价 | ||
YANGJIE | N-CH MOSFET 30V 30A... |
1 | 2,000 | 加入询价 | ||
Goford Semiconductor | P-20V,-16A,RD(MAX)<17M... |
1 | 3,000 | 加入询价 | ||
Goford Semiconductor | N/P30V,6.5A/-5A,RD(MA... |
1 | 4,000 | 加入询价 | ||
YANGJIE | N-CH MOSFET 30V 50A... |
1 | 2,000 | 加入询价 | ||
Goford Semiconductor | P-60V,-12A,RD(MAX)<75M... |
1 | 2,500 | 加入询价 | ||
Goford Semiconductor | P-80V,-6.5A,RD(MAX)<72... |
1 | 4,000 | 加入询价 | ||
Goford Semiconductor | P-60V,-8A,RD(MAX)<23M... |
1 | 4,000 | 加入询价 | ||
Goford Semiconductor | P-30V,-25A,RD(MAX)<5.5... |
1 | 4,000 | 加入询价 | ||
Goford Semiconductor | P-30V,-85A,RD(MAX)<4.5... |
1 | 2,500 | 加入询价 | ||
Goford Semiconductor | P-100V,-12A,RD(MAX)<20... |
1 | 2,000 | 加入询价 |