- 漏源电压(Vdss):
-
- 25°C 时电流 - 连续漏极 (Id):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
10 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | G3 650V SIC-MOSFET ... |
1 | 109 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | G3 650V SIC-MOSFET ... |
1 | 175 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | G3 650V SIC-MOSFET ... |
1 | 163 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | G3 1200V SIC-MOSFET... |
1 | 130 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | G3 650V SIC-MOSFET ... |
1 | 161 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | G3 1200V SIC-MOSFET... |
1 | 50 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | G3 1200V SIC-MOSFET... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | G3 1200V SIC-MOSFET... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | G3 1200V SIC-MOSFET... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | G3 650V SIC-MOSFET ... |
1 | 21 | 加入询价 |