- 品牌:
-
- Diodes Incorporated (27)
- 25°C 时电流 - 连续漏极 (Id):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
- 功率耗散(最大值):
-
31 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Taiwan Semiconductor | 40V, 54A, SINGLE N-C... |
1 | 4,000 | 加入询价 | ||
Taiwan Semiconductor | 40V, 100A, SINGLE N-C... |
1 | 4,995 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 31V~... |
1 | 2,485 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 101V... |
1 | 1,425 | 加入询价 | ||
Infineon Technologies | 40V N-CH FET SOURC... |
1 | 3,645 | 加入询价 | ||
Infineon Technologies | TRENCH <= 40V PG-TT... |
1 | 302 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 61V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 61V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 31V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 61V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 101V... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 61V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 61V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 25V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 41V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 31V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET N-CH 60V PW... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 61V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 31V~... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET BVDSS: 61V~... |
1 | 2,000 | 加入询价 |