- 25°C 时电流 - 连续漏极 (Id):
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
- 功率耗散(最大值):
-
11 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 400M... |
1 | 155,859 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 100M... |
1 | 22,934 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 800M... |
1 | 26,951 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 1.4A... |
1 | 168,964 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 180M... |
1 | 21,252 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 200M... |
1 | 4,275 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 100M... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 100M... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 100M... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 100M... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 100M... |
1 | 2,000 | 加入询价 |