- 25°C 时电流 - 连续漏极 (Id):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
11 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 24A... |
1 | 9,814 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | X35 PB-F POWER MOS... |
1 | 4,945 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 15A... |
1 | 2,472 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | X35 PB-F POWER MOS... |
1 | 1,381 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 18A... |
1 | 2,450 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | X35 PB-F POWER MOS... |
1 | 2,496 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 25A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
1 | 2,000 | 加入询价 |