- 品牌:
-
- Nexperia (5)
- ON Semiconductor (4)
- 封装/外壳:
-
- 供应商器件封装:
-
- 25°C 时电流 - 连续漏极 (Id):
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
- FET 功能:
-
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 15A... |
1 | 29,470 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 40V 12A... |
1 | 47,752 | 加入询价 | ||
Nexperia | MOSFET P-CH 20V 2.5A... |
1 | 20,715 | 加入询价 | ||
Texas Instruments | MOSFET P-CH 20V 4A ... |
1 | 1,450 | 加入询价 | ||
Nexperia | SMALL SIGNAL MOS... |
1 | 9,970 | 加入询价 | ||
Taiwan Semiconductor | MOSFET N-CH 30V 55A... |
1 | 4,461 | 加入询价 | ||
Nexperia | MOSFET P-CH 20V 3.1A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | N-CH MOSFET 40V, +/-... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | N-CH MOSFET 30V, +/-... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET N-CH 20V 6A ... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET N-CH 20V 6.7A... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET N-CH 20V 6A ... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET N-CH 20V 6.7A... |
1 | 2,000 | 加入询价 | ||
Nexperia | PMCB60XNE/SOT8026/D... |
1 | 2,000 | 加入询价 | ||
STMicroelectronics | MOSFET N-CH 75V 32A... |
1 | 2,000 | 加入询价 | ||
Texas Instruments | MOSFET P-CH 20V 4A ... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | MOSFET N-CH 20V 4.2A... |
1 | 2,000 | 加入询价 | ||
Vishay / Siliconix | MOSFET N-CH 20V 4.4A... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | MOSFET N-CH 20V 4.2A... |
1 | 2,000 | 加入询价 | ||
Vishay / Siliconix | MOSFET N-CH 20V 3.1A... |
1 | 2,000 | 加入询价 |