- 品牌:
-
- Diodes Incorporated (77)
- Intersil(瑞萨电子公司) (3)
- Nexperia (5)
- ON Semiconductor (110)
- ROHM Semiconductor (39)
- 安装类型:
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- 工作温度:
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- 封装/外壳:
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- 供应商器件封装:
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- FET 类型:
-
- 漏源电压(Vdss):
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- 25°C 时电流 - 连续漏极 (Id):
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- 驱动电压(最大 Rds On,最小 Rds On):
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- 不同 Id、Vgs 时导通电阻(最大值):
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- 不同 Vgs 时栅极电荷 (Qg)(最大值):
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- Vgs(最大值):
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- 不同 Vds 时输入电容 (Ciss)(最大值):
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- FET 功能:
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- 功率耗散(最大值):
-
283 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Diodes Incorporated | MOSFET N-CH 60V 600M... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET N-CH 60V 1.1A... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 60V 500M... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 60V 200M... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 60V 200M... |
1 | 30,699 | 加入询价 | ||
ROHM Semiconductor | MOSFET P-CH 45V 2A ... |
1 | 2,000 | 加入询价 | ||
ROHM Semiconductor | MOSFET P-CH 60V 1.5A... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 30V 18A... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET N-CH 60V 0.15... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 40V 10A... |
1 | 2,000 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 30V 24A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 40V 20A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 60V 15A... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET N-CH 200V 320... |
1 | 2,000 | 加入询价 | ||
Diodes Incorporated | MOSFET N-CH 60V 1A ... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 40V 40A... |
1 | 2,000 | 加入询价 | ||
ROHM Semiconductor | MOSFET N-CH 60V 5A ... |
1 | 1 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 40V 60A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 60V 50A... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 40V 80A... |
1 | 2,000 | 加入询价 |