- 品牌:
-
- ON Semiconductor (17)
- NXP Semiconductors (13)
- Vishay / Siliconix (17)
- 25°C 时电流 - 连续漏极 (Id):
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id、Vgs 时导通电阻(最大值):
-
- 不同 Id 时 Vgs(th)(最大值):
-
- 不同 Vgs 时栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时输入电容 (Ciss)(最大值):
-
72 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
ON Semiconductor | MOSFET N-CH 30V 154M... |
1 | 203,538 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 800M... |
1 | 5,844,621 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 20V 915M... |
1 | 531,745 | 加入询价 | ||
ON Semiconductor | MOSFET P-CH 20V 760M... |
1 | 279,824 | 加入询价 | ||
Vishay / Siliconix | MOSFET N-CH 20V 500M... |
1 | 252,767 | 加入询价 | ||
Vishay / Siliconix | MOSFET P-CH 60V 190M... |
1 | 59,134 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 300M... |
1 | 164,809 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CHANNEL... |
1 | 8,911 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 20V 250M... |
1 | 17,232 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 100M... |
1 | 125,878 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 20V 330M... |
1 | 488,958 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 500M... |
1 | 19,667 | 加入询价 | ||
ON Semiconductor | MOSFET N-CH 30V 154M... |
1 | 7,104 | 加入询价 | ||
ROHM Semiconductor | MOSFET N-CH 20V 200M... |
1 | 53,950 | 加入询价 | ||
ROHM Semiconductor | MOSFET P-CH 20V 200M... |
1 | 114,859 | 加入询价 | ||
ROHM Semiconductor | MOSFET N-CH 20V 300M... |
1 | 99,383 | 加入询价 | ||
Vishay / Siliconix | MOSFET N-CH 20V 140M... |
1 | 19,599 | 加入询价 | ||
Vishay / Siliconix | MOSFET P-CH 20V 140M... |
1 | 20,366 | 加入询价 | ||
Vishay / Siliconix | MOSFET P-CH 20V 350M... |
1 | 130,530 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 100M... |
1 | 29,534 | 加入询价 |