- 品牌：
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- 安装类型：
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- 封装/外壳：
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- 供应商器件封装：
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- 电压 - DC 反向 (Vr)（最大值）：
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- 不同 Vr、F 时电容：
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- 不同 Vr 时电流 - 反向泄漏：
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25 条记录
| 图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
|---|---|---|---|---|---|---|
|
Vishay General Semiconductor – Diodes Division | DIODE GP 300V 400MA ... |
1 | 9,886 | 加入询价 | |
|
|
STMicroelectronics | DIODE SIL CARBID... |
1 | 4,629 | 加入询价 | |
|
|
STMicroelectronics | DIODE SIL CARB 1.2... |
1 | 2,899 | 加入询价 | |
|
|
Sanken Electric Co., Ltd. | DIODE GEN PURP 600... |
1 | 1,524 | 加入询价 | |
|
|
ROHM Semiconductor | DIODE SIC 650V 2.15A... |
1 | 790 | 加入询价 | |
|
|
Sanken Electric Co., Ltd. | DIODE GEN PURP 600... |
1 | 583 | 加入询价 | |
|
|
Taiwan Semiconductor | 25NS, 2A, 600V, ULTRA... |
1 | 2,000 | 加入询价 | |
|
|
Taiwan Semiconductor | 25NS, 2A, 600V, ULTRA... |
1 | 2,000 | 加入询价 | |
|
|
Taiwan Semiconductor | 25NS, 2A, 600V, ULTRA... |
1 | 2,000 | 加入询价 | |
|
|
Taiwan Semiconductor | 25NS, 2A, 600V, ULTRA... |
1 | 2,000 | 加入询价 | |
|
|
Taiwan Semiconductor | 25NS, 2A, 600V, ULTRA... |
1 | 2,000 | 加入询价 | |
|
|
ROHM Semiconductor | DIODE SILICON CA... |
1 | 2,000 | 加入询价 | |
|
|
Global Power Technology | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | |
|
|
Diodes Incorporated | DIODE GEN PURP 500... |
1 | 2,000 | 加入询价 | |
|
|
Diodes Incorporated | DIODE GEN PURP 600... |
1 | 2,000 | 加入询价 | |
|
|
Vishay General Semiconductor – Diodes Division | DIODE GP 300V 400MA ... |
1 | 2,000 | 加入询价 | |
|
|
Vishay General Semiconductor – Diodes Division | DIODE GP 300V 400MA ... |
1 | 2,000 | 加入询价 | |
|
|
Vishay General Semiconductor – Diodes Division | DIODE GP 300V 400MA ... |
1 | 2,000 | 加入询价 | |
|
|
Sanken Electric Co., Ltd. | DIODE GEN PURP 600... |
1 | 2,000 | 加入询价 | |
|
|
Sanken Electric Co., Ltd. | DIODE GEN PURP 600... |
1 | 2,000 | 加入询价 |
