- 品牌：
-
- Microchip Technology (24)
- STMicroelectronics (11)
- Taiwan Semiconductor (23)
- 封装/外壳：
-
- 供应商器件封装：
-
- 反向恢复时间 (trr)：
-
- 不同 Vr、F 时电容：
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- 不同 If 时电压 - 正向 (Vf)：
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- 不同 Vr 时电流 - 反向泄漏：
-
108 条记录
| 图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
|---|---|---|---|---|---|---|
|
Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 600... |
1 | 2,858 | 加入询价 | |
|
|
Power Integrations | DIODE GEN PURP 600... |
1 | 4,953 | 加入询价 | |
|
|
STMicroelectronics | DIODE GP 600V 12A TO... |
1 | 1,615 | 加入询价 | |
|
|
STMicroelectronics | DIODE GP 600V 12A TO... |
1 | 965 | 加入询价 | |
|
|
Vishay General Semiconductor – Diodes Division | DIODE GP 600V 12A TO... |
1 | 1,148 | 加入询价 | |
|
|
Vishay General Semiconductor – Diodes Division | DIODE GP 600V 12A TO... |
1 | 1,088 | 加入询价 | |
|
|
STMicroelectronics | DIODE GEN PURP 600... |
1 | 1,928 | 加入询价 | |
|
|
ROHM Semiconductor | DIODE GP 600V 12A TO... |
1 | 927 | 加入询价 | |
|
|
STMicroelectronics | DIODE GEN PURP 600... |
1 | 653 | 加入询价 | |
|
|
ROHM Semiconductor | DIODE GP 600V 12A TO... |
1 | 1,000 | 加入询价 | |
|
|
GeneSiC Semiconductor | DIODE GEN PURP RE... |
1 | 45 | 加入询价 | |
|
|
STMicroelectronics | DIODE GP 600V 12A TO... |
1 | 1,000 | 加入询价 | |
|
|
Power Integrations | DIODE SIL CARB 600... |
1 | 500 | 加入询价 | |
|
|
Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 600... |
1 | 100 | 加入询价 | |
|
|
Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 600... |
1 | 980 | 加入询价 | |
|
|
Infineon Technologies | DIODE SIL CARB 600... |
1 | 2,000 | 加入询价 | |
|
|
STMicroelectronics | DIODE GP 600V 12A TO... |
1 | 2,000 | 加入询价 | |
|
|
STMicroelectronics | DIODE SIL CARB 600... |
1 | 2,000 | 加入询价 | |
|
|
Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 600... |
1 | 2,000 | 加入询价 | |
|
|
Taiwan Semiconductor | 25NS, 12A, 600V, ULTRA... |
1 | 6,000 | 加入询价 |
