- 品牌:
-
- UnitedSiC (1)
- 安装类型:
-
- 封装/外壳:
-
- 供应商器件封装:
-
- 电压 - DC 反向 (Vr)(最大值):
-
- 不同 Vr、F 时电容:
-
- 不同 If 时电压 - 正向 (Vf):
-
- 不同 Vr 时电流 - 反向泄漏:
-
27 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Infineon Technologies | DIODE SIL CARB 1.2... |
1 | 7,471 | 加入询价 | ||
UnitedSiC | DIODE SIL CARB 1.2... |
1 | 18,485 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 1.2... |
1 | 190 | 加入询价 | ||
STMicroelectronics | DIODE SIL CARB 1.2... |
1 | 2,899 | 加入询价 | ||
SMC Diode Solutions | DIODE SIL CARB 1.2... |
1 | 1,986 | 加入询价 | ||
SMC Diode Solutions | DIODE SIL CARBID... |
1 | 2,231 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 650... |
1 | 161 | 加入询价 | ||
Diodes Incorporated | DIODE SIL CARB 1.2... |
1 | 50 | 加入询价 | ||
Diodes Incorporated | DIODE SIL CARB 1.2... |
1 | 50 | 加入询价 | ||
GeneSiC Semiconductor | DIODE SIL CARB 1.2... |
1 | 2,000 | 加入询价 | ||
STMicroelectronics | DIODE SIL CARBID... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARBID... |
1 | 2,000 | 加入询价 | ||
ROHM Semiconductor | DIODE SILICON CA... |
1 | 2,000 | 加入询价 | ||
WeEn Semiconductors Co., Ltd | WNSC2D021200D/TO252/R... |
1 | 2,000 | 加入询价 | ||
Micro Commercial Components (MCC) | DIODE SIL CARBID... |
1 | 2,000 | 加入询价 | ||
STMicroelectronics | DIODE SIL CARBID... |
1 | 2,000 | 加入询价 | ||
WeEn Semiconductors Co., Ltd | DIODE SIL CARB 1.2... |
1 | 2,000 | 加入询价 | ||
Micro Commercial Components (MCC) | DIODE SIL CARBID... |
1 | 2,000 | 加入询价 |