- 封装/外壳:
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- 供应商器件封装:
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- 不同 Vr、F 时电容:
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- 不同 Vr 时电流 - 反向泄漏:
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20 条记录
图片 | 型号 | 品牌 | 描述 | 起订量 | 库存 | 操作 |
---|---|---|---|---|---|---|
Infineon Technologies | DIODE SIL CARB 650... |
1 | 15,000 | 加入询价 | ||
UnitedSiC | DIODE SIL CARB 650... |
1 | 4,601 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 650... |
1 | 1,389 | 加入询价 | ||
WeEn Semiconductors Co., Ltd | DIODE SIL CARBID... |
1 | 3,000 | 加入询价 | ||
PANJIT | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | ||
SMC Diode Solutions | DIODE SIL CARBID... |
1 | 678 | 加入询价 | ||
SMC Diode Solutions | DIODE SIL CARB 650... |
1 | 8,699 | 加入询价 | ||
WeEn Semiconductors Co., Ltd | DIODE SIL CARB 650... |
1 | 1,177 | 加入询价 | ||
WeEn Semiconductors Co., Ltd | DIODE SIL CARBID... |
1 | 3,036 | 加入询价 | ||
SMC Diode Solutions | DIODE SIL CARBID... |
1 | 247 | 加入询价 | ||
WeEn Semiconductors Co., Ltd | DIODE SIL CARB 650... |
1 | 2,974 | 加入询价 | ||
Infineon Technologies | DISCRETE DIODES |
1 | 980 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | DIODE SIL CARB 650... |
1 | 9 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | ||
Toshiba Electronic Devices and Storage Corporation | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 | ||
Infineon Technologies | DIODE SIL CARB 650... |
1 | 2,000 | 加入询价 |